| http://www.w3.org/ns/prov#value | - bstrate 42 provided with the semiconductor pattern 48 by a deposition technique, such as sputtering, the source/drain metal layer is patterned by a photolithography process and a wet-etching process using a third mask, thereby providing the source/drain patterns including the data line 4, the source electrode 10, and the drain electrode 12.
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