| http://www.w3.org/ns/prov#value | - which is electrically separated from the gate electrode by side-etching the second conductive layer; forming a second mask by removing the thin film region in the first mask; forming a third semiconductor layer including an eaves portion by etching at least the second semiconductor layer using the second mask; and forming, at least, an impurity region in a position which overlaps the eaves portio
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