| http://www.w3.org/ns/prov#value | - wo bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trappingUS6654280Jan 28, 2003Nov 25, 2003Micron Technology, Inc.Memory device with multi-level storage cellsUS6714455Jul 5, 2002Mar 30, 2004Btg International Inc.Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory
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