| http://www.w3.org/ns/prov#value | - After the deposition of the ZrO2 layer and the Al2O3 layer in-situ according to the ALD method, a low temperature annealing process is performed to remove impurities such as carbon and hydrogen and eliminate defects like oxygen apertures and surface roughness, so that leakage current and breakdown voltage characteristics of the aforementioned thin layers can be improved.
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