| http://www.w3.org/ns/prov#value | - In order to improve the adhesion of noble metals, for example of a storage capacitor of a semiconductor memory, U.S. Pat. No. 5,668,040, teaches providing a layer of a transition metal, e.g. from subgroup IVb, Vb or VIb, between the noble metal of the bottom capacitor electrode and the insulation layer including silicon oxide.
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