| http://www.w3.org/ns/prov#value | - In some embodiments of the present invention, the SiC passivation layer 110, 110??? is insulating or p-type SiC. If the SiC passivation layer, 110??? is p-type SiC, an insulating region, such as a SiN layer or a gap, may be provided between the SiC passivation layer 110, 110??? and the ohmic contacts 32.
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