| http://www.w3.org/ns/prov#value | - According to the study of the present inventors, it was found that the crystallization of an amorphous silicon film can be effected by heating the film at 550??? C. for a duration of about 4 hours by the provision of a trace amount of nickel or palladium, or other elements such as lead, onto the surface of the amorphous silicon film.
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