| http://www.w3.org/ns/prov#value | - Of course, the gate insulating film is not limited to thesilicon oxynitride film and another insulating film including silicon may be used.Also, when a silicon oxide film is used, TEOS (tetraethyl orthosilicate) and O.sub.2 are mixed by a plasma CVD method, a reaction pressure is set to be 40 Pa, and a substrate temperature is set to be 300.degree.
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