| http://www.w3.org/ns/prov#value | - structure formation in transistor with vertical channel regionUS7572699Jan 24, 2007Aug 11, 2009Freescale Semiconductor, IncProcess of forming an electronic device including fins and discontinuous storage elementsUS7573114Aug 29, 2008Aug 11, 2009Freescale Semiconductor, Inc.Electronic device including a gated diodeUS7582929Jul 25, 2005Sep 1, 2009Freescale Semiconductor, IncElectronic device includi
|
