| http://www.w3.org/ns/prov#value | - Insulating films 19, 19 of a suitable material such as silicon dioxide or a composite film such as a first film silicon dioxide having a thin glass sheath or film thereover are applied to portions of the upper and lower surfaces of the transistor, as represented, to protect from contamination those portions of the junctions 14 and 15 which extend to those surfaces.
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