| http://www.w3.org/ns/prov#value | - In this case, however, there is a problem that, if the material temperature is raised so as to increase the partial pressures of SiC2 and Si2C, which have low vapor pressures, in order to sufficiently supply C, the partial pressure of the Si system will be so high that the stoichiometry (stoichiometric composition) of the material and synthesized crystal may shift.
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