| http://www.w3.org/ns/prov#value | - Multiple-channel non-planar transistor 200 is encapsulated in an insulating media, or interlayer dielectric (ILD) 222 as shown in FIG. 2A. In an embodiment of the present invention, the ILD is a material having a low dielectric constant, such as a film with high porosity or a film of carbon-doped oxide.
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