| http://www.w3.org/ns/prov#value | - Further, the previously etched layers are treated using a plasma including oxygen, which is introduced into a vacuum chamber at a high pressure (about 1 Torr) without breaking vacuum as the wafer (e.g., substrate 124 (FIGS. 1A-6)) passes from one chamber to another in, for example, a cluster tool (745).
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