| http://www.w3.org/ns/prov#value | - Rapid thermal oxidation is typically performed at 1150??? C. for 4 minutes with dry oxygen in a rapid thermal processor, such as the processor distributed by A G Associates, Heatpulse 2101, Rapid Thermal Processing System, Palo Alto, CA. Typical silicon dioxide thicknesses can vary from 200 ??? to 1,000 ???, and preferably between 475 to 525 ???.
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