| http://www.w3.org/ns/prov#value | - The conductive film 16 has a thickness of, e.g. about 10 nm to 300 nm. [0126] In the region of the source line SL, a portion or the entirety of the gate insulation film comprising the tunnel insulation film 31, charge accumulation layer 32 and block insulation film 33, which is formed on the semiconductor substrate 11, is etched away.
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