| http://www.w3.org/ns/prov#value | - st insulating film, and on exposed edges of said resist pattern; removing said second insulating film except for said part of said second insulating film on said exposed edges of said resist patter; forming a source region and a drain region for said field effect transistor by ion implantation into said substrate with said resist pattern and said first and second insulating films in place; then re
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