| http://www.w3.org/ns/prov#value | - yst element for accelerating crystallization, then implanting ions including phosphorus ions into their source and drain regions by known ion doping (also called plasma doping), and finally selectively implanting P-type impurity ions (in this embodiment, ions including boron ions). [0057]FIGS. 2A to 2F shows a manufacturing process of CMOS TFTs according to this embodiment.
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