| http://www.w3.org/ns/prov#value | - Before formation of the oxide semiconductor film, heat treatment (at higher than or equal to 400??? C. and lower than the strain point of the substrate) may be performed in an inert gas atmosphere (e.g., nitrogen, helium, neon, or argon), so that impurities such as hydrogen and water, which are included in the gate insulating layer 402, are removed.
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