| http://www.w3.org/ns/prov#value | - A semiconductor device comprising: a shielding film formed on an insulating surface; a planarization insulating film formed on the insulating surface so as to cover the shielding film; and a thin film transistor including an active layer, the transistor being formed so as to be in contact with the planarization insulating film, wherein the active layer has a channel formation region, wherein the s
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