| http://www.w3.org/ns/prov#value | - After bonding together of the two wafers 25 and 29, one of these wafers 29 is subjected to a suitable and usual polishing treatment whereby silicon is removed until a silicon layer 32 of a desired thickness, for example of 1 ??m, remains on the insulating and passivating layer 26, 27, 31.
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