About: http://webisa.webdatacommons.org/158011393

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	In a first aspect, the present invention is a method of forming a semiconductor structure, comprising oxidizing a stack, to form sidewall oxide in contact with sides of the stack.
http://www.w3.org/ns/prov#wasQuotedFrom	patents.com