| http://www.w3.org/ns/prov#value | - te, where the oxidized film is formed, is bonded with a member such as the insulating substrate, and owing to the heat treatment, the substrates are bonded with siloxane bond so that the substrates become tightly bonded, and also, since the cleavage stripping at the dense position is conducted by heating, it is possible to obtain a MOS single-crystal silicon thin-film transistor with ease, even if
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