| http://www.w3.org/ns/prov#value | - It is to be understood that FIG. 2 is an exemplary construction, and methods of the invention are useful for forming niobium oxide layers and/or vanadium oxide layers on any substrate, preferably on semiconductor structures, and that such applications include capacitors such as planar cells, trench cells, (e.g., double sidewall trench capacitors), stacked cells (e.g., crown, V-cell, delta cell, mu
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