| http://www.w3.org/ns/prov#value | - SUMMARY OF THE INVENTION [0010] It is accordingly an object of the invention to provide a method of producing doped layers which are mainly composed of polycrystalline silicon which is deposited in a chemical vapor deposition, and for fabricating layered structures which comprise such a doped layer composed of polycrystalline silicon, which overcomes the above-mentioned disadvantages of the hereto
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