| http://www.w3.org/ns/prov#value | - Ltd.Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory deviceUS7399666Feb 15, 2005Jul 15, 2008Micron Technology, Inc.Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectricsUS7402851Aug 4, 2004Jul 22, 2008Samsung Electronics Co., Ltd.Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating
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