| http://www.w3.org/ns/prov#value | - At the same time, the LDD area 86p of the p-type having a concentration lower than that of the base contact area 89 is formed in the element area 18 of the bi-polar transistor area 80.More specifically, a resist pattern RP7 is formed on the n-type MOS transistor area 50 and the bi-polar transistor area 80 in an area except areas where the collector area 92c and the emitter area 92e are formed and
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