| http://www.w3.org/ns/prov#value | - Step 520 is the depositing of a thin layer of less than 50 ??? of an interposing material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon nitride (SiN or Si3N4), or silicon dioxide (SiO2) or a high-k material, such titanium oxide (TiO2), zirconium oxide (ZrO2), hafnium oxide (HfO2), tantalum oxide (Ta2O5), or barium and strontium titanium oxide ((Ba,Sr)TiO3), but preferably ZrO2,
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