| http://www.w3.org/ns/prov#value | - It is an object of the present invention to provide an ion implantation method capable of efficiently implanting hydrogen ions into a semiconductor substrate, and provide a method for manufacturing an SOI wafer, in which manufacturing efficiency of the SOI wafer is sufficiently high. [0011] In order to solve the foregoing problems, the ion implantation method of the present invention is a method f
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