| http://www.w3.org/ns/prov#value | - thermally oxidizing a portion of silicon carbide to thereby form a first layer of silicon dioxide on the silicon carbide portion with, said first layer having a thickness representing between about 0.5 percent and 33 percent of the thickness of said dielectric structure; depositing on said first layer of silicon dioxide a layer of an insulating material, other than silicon dioxide, with said insul
|
