| http://www.w3.org/ns/prov#value | - 20100258865TRANSISTOR HAVING RECESS CHANNEL AND FABRICATING METHOD THEREOF - A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidew
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