PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • It will also be appreciated that our invention, viewed from another aspect, is a method for enhancing the mobility of a given narrow bandgap semiconductor material by fabricating the narrow bandgap material in the form of a first plurality of spaced layers which are undoped or unintentionally doped and fabricating a second plurality of wide bandgap semiconductor layers contiguous with and interlea
http://www.w3.org/ns/prov#wasQuotedFrom
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