| http://www.w3.org/ns/prov#value | - It is apparent that the prior methods of doping such films which produced a conductivity of only 10-2 (ohm cm)-1 would not provide a useful ohmic interface. (In contrast, the present invention enables the amorphous silicon and other films to be modified by the addition of conduction-increasing materials so that the conductivity is increased to 10-1 (ohm cm)-1 or greater, which makes the films of t
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