| http://www.w3.org/ns/prov#value | - ???t 20008 oct. 2002Micron Technology, Inc.Thin dielectric films for DRAM storage capacitorsUS654128020 mars 20011 avr. 2003Motorola, Inc.Dielectric layer of lanthanum aluminate over the semiconductor substrate; and an electrode layer over the dielectric layerUS6548825 *5 juin 200015 avr. 2003Matsushita Electric Industrial Co., Ltd.Semiconductor device including barrier layer having dispersed part
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