| http://www.w3.org/ns/prov#value | - A third aspect of the invention provides a method of manufacturing the semiconductor device including a semiconductor substrate, an n-type drift region in the semiconductor substrate, p-type base regions formed selectively in the surface portion of the drift region, one or more n-type emitter regions in the surface portion of each of the base regions, a gate electrode facing to a part of each of t
|
