| http://www.w3.org/ns/prov#value | - tion provides such a method that is especially applicable to the case where the localized areas are defined on an epitaxial silicon-germanium layer.Another object of the present invention is to form an NPN transistor structure with a silicon-germanium base.To achieve these and other objects, the present invention provides a method for defining, on the upper surface of a substrate, two self-aligned
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