| http://www.w3.org/ns/prov#value | - trench depth and performing a field stop implant process during the formation of an STI to implant a high density of impurity ions which results in an increase in field threshold voltage, and reduces damage of silicon by plasma through enlarging a field of an area which is more than 5 times as thick as an oxide film of an STI sidewall due to a doping density difference, wherein the area is an area
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