| http://www.w3.org/ns/prov#value | - thereby forming a stacking structure including the tunnel insulating film, the electric charge storage layer, the top insulating film and the control electrode; forming side walls of at least one selected from the group consisting of SiO2, SiN and SiON so as to cover sides of the stacking structure; and conducting ion implantation for the semiconductor substrate using the stacking structure and th
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