| http://www.w3.org/ns/prov#value | - It is to be understood that the TFT and the method of forming the TFT according to aspects of the present invention is not limited to what is described above, and that any structure or method including a semiconductor layer formed by forming a thermal oxide layer having a thickness of about 10 to 50 ??? and a metal catalyst layer on amorphous silicon and crystallizing the amorphous silicon using t
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