| http://www.w3.org/ns/prov#value | - the process temperature of about 550??? C. and the use of tungsten plugs over titanium and titanium nitride layers to contact N+, P+, Poly 1 and other underlying materials under the first level of interconnection of the integrated circuit incorporating CMOS, bipolar, Bi-CMOS and/or high-voltage devices low-stress mechanical structures allowing the mechanical functions of the integrated MEMS device
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