| http://www.w3.org/ns/prov#value | - te of the input circuit is protected. [0017] If the voltage applied to the LVTSCR2 equal to at least the snap-back breakdown voltage is higher than a gate breakdown voltage of an NMOS transistor Mn1, however, there is a problem that the internal circuits are damaged by a surge voltage input. [0018]FIG. 10 is a circuit diagram showing a principal part of a different ESD protection circuit disclosed
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