| http://www.w3.org/ns/prov#value | - 20110207256IN-SITU ACCEPTOR ACTIVATION WITH NITROGEN AND/OR OXYGEN PLASMA TREATMENT - Embodiments of the present invention generally relate to methods and apparatus for the manufacturing of devices, such as light emitting diodes (LEDs), laser diodes (LDs) and, more particularly, to processes for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes.
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