| http://www.w3.org/ns/prov#value | - Typically, high-k dielectric materials, i.e., with k???5, suitable for use as gate dielectric layers in the manufacture of semiconductor devices, are formed with a physical thickness from about 40 to about 500 ???, typically 40-100 ??? (or a SiO2 equivalent thickness less than about 40 ???), and comprise metal and oxygen-containing material including at least one dielectric material selected from
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