PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Accordingly, there is a need to provide an improved structure and method of making a dual gate finFET having a back gate for adjusting the threshold voltage of the finFET, while adding less capacitance to the device.
http://www.w3.org/ns/prov#wasQuotedFrom
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