| http://www.w3.org/ns/prov#value | - y, the surface of the semiconductor substrate other than in the trench has a (100) plane, and the surface of a semiconductor substrate rounded at the top edges of the trench has a (111) plane.The third object is achieved by a trench isolation method including: forming a trench in non-active regions of a semiconductor substrate; forming an inner wall oxide film on the inner wall of the trench; form
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