PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The few GaN devices today on the market are based on AlGaN/GaN high-electron mobility transistor (HEMT) structures and are normally-on devices, designed for RF applications, e.g. in wireless communication.
http://www.w3.org/ns/prov#wasQuotedFrom
  • nanotech-now.com