| http://www.w3.org/ns/prov#value | - The manufacturing method in the second modification will be described with reference to FIG. 8. (1) As described above in the first embodiment with reference to FIG. 2(B), physical deposition such as deposition or sputtering is conducted to a silicon wafer 20A, thereby forming a conductive metallic film 33 on the entire surface of the silicon wafer 20A (see FIG. 8(A)).
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