| http://www.w3.org/ns/prov#value | - Here, although the description has been made on the example in which the insulating film (SiNxByOz) containing boron of 0.1 to 50 atoms % or 1 to 50 atoms %, preferably 0.1 to 10 atoms % and oxygen of 1 to 30 atoms % is used as one layer of the gate insulating film of the bottom gate type TFT, the invention is not particularly limited as long as a film is an insulating film.
|
