PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • In one embodiment, a silicon nitride layer is provided on the resulting structure for example formed by CVD, or other suitable deposition or growth process, to a depth on the order of approximately 500 to 700 Angstroms.
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