About: http://webisa.webdatacommons.org/16857620

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	In an embodiment of the present invention, the gate dielectric layer is a high-K dielectric such as, but not limited to, metal oxide dielectric such as tantalum oxide, titanium oxide, zirconium oxide, and hafnium oxide.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com