| http://www.w3.org/ns/prov#value | - In one embodiment, second electrode 206 is substantially centered over storage location 204.Insulation material, such as SiO2, SiOx, SiN, FSG, BPSG, BSG, low-k material, or other suitable dielectric material is deposited over exposed portions of second electrode 206 and dielectric material layer 210a.
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